DiodesZetex DMG3414U Type N-Channel MOSFET, 4.2 A, 20 V Enhancement, 3-Pin SOT-23 DMG3414U-7
- RS Stock No.:
- 751-4086
- Mfr. Part No.:
- DMG3414U-7
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
TWD257.50
(exc. GST)
TWD270.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 25 unit(s) ready to ship from another location
- Plus 2,175 unit(s) shipping from March 06, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 725 | TWD10.30 | TWD257.50 |
| 750 - 1475 | TWD9.90 | TWD247.50 |
| 1500 + | TWD9.80 | TWD245.00 |
*price indicative
- RS Stock No.:
- 751-4086
- Mfr. Part No.:
- DMG3414U-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | DMG3414U | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 780mW | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series DMG3414U | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 780mW | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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