Infineon HEXFET Type N-Channel MOSFET, 4.1 A, 20 V Enhancement, 3-Pin SOT-23 IRLML6246TRPBF
- RS Stock No.:
- 737-7221
- Distrelec Article No.:
- 304-45-317
- Mfr. Part No.:
- IRLML6246TRPBF
- Manufacturer:
- Infineon
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TWD206.00
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TWD216.40
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
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| 760 - 1480 | TWD10.10 | TWD202.00 |
| 1500 + | TWD9.80 | TWD196.00 |
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- RS Stock No.:
- 737-7221
- Distrelec Article No.:
- 304-45-317
- Mfr. Part No.:
- IRLML6246TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 66mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.3W | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 66mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.3W | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Height 1.02mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 20V Maximum Drain Source Voltage, 4.1A Maximum Continuous Drain Current - IRLML6246TRPBF
This MOSFET is a compact N‑channel enhancement device designed for low-voltage switching in surface-mount assemblies. It operates across a wide temperature range and accepts gate-drive levels compatible with common control circuits. The package and electrical characteristics make it appropriate for space‑constrained boards requiring efficient switching performance without elevated power‑handling requirements.
Features and Benefits:
• Maximum drain-source voltage 20V enables low-voltage switching applications
• Continuous drain current 4.1A supports moderate load currents
• Low on‑resistance 66 mΩ minimises conduction losses
• Typical gate charge 3.5 nC allows faster switching transitions
• Maximum power dissipation 1.3W suits constrained thermal budgets
• Gate-source tolerance up to 12V permits robust drive margins
• Continuous drain current 4.1A supports moderate load currents
• Low on‑resistance 66 mΩ minimises conduction losses
• Typical gate charge 3.5 nC allows faster switching transitions
• Maximum power dissipation 1.3W suits constrained thermal budgets
• Gate-source tolerance up to 12V permits robust drive margins
Applications
• Suitable for battery-management switching in portable systems
• Ideal for load switching in power-distribution modules
• Used with gate drivers in motor-control low-voltage stages
• Can be used for DC-DC converter synchronous switching
• Suitable for signal-level high-speed switching in control circuits
• Ideal for load switching in power-distribution modules
• Used with gate drivers in motor-control low-voltage stages
• Can be used for DC-DC converter synchronous switching
• Suitable for signal-level high-speed switching in control circuits
What thermal extremes can this device tolerate in operation?
It is specified to operate from -55 °C up to 150 °C, allowing use in environments with wide temperature fluctuations.
How does the package influence PCB layout and assembly?
The SOT‑23 surface‑mount format with three pins reduces board area and supports automated pick‑and‑place and reflow processes.
What is the expected behaviour under higher gate voltages?
The device limits gate‑source ratings to 12V maximum, so gate drives should remain within this threshold to prevent gate‑oxide stress.
How does the device perform under continuous load?
Continuous drain current is rated at 4.1A while thermal dissipation is constrained to 1.3 W, so adequate copper area or heatsinking is required to maintain safe junction temperatures.
Related links
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23