Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23 IRLML2030TRPBF
- RS Stock No.:
- 725-9353
- Distrelec Article No.:
- 304-45-312
- Mfr. Part No.:
- IRLML2030TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 20 units)*
TWD196.00
(exc. GST)
TWD205.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
- Plus 800 left, shipping from August 10, 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 740 | TWD9.80 | TWD196.00 |
| 760 - 1480 | TWD9.40 | TWD188.00 |
| 1500 + | TWD9.10 | TWD182.00 |
*price indicative
- RS Stock No.:
- 725-9353
- Distrelec Article No.:
- 304-45-312
- Mfr. Part No.:
- IRLML2030TRPBF
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.3W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.3W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 100mΩ Maximum Drain Source Resistance - IRLML2030TRPBF
Features and Benefits:
• 30V drain-source rating permits moderate-voltage switching
• Continuous drain current 2.7A supports sustained load operation
• Low gate charge 1nC enables fast, efficient switching
• Maximum power dissipation 1.3W allows thermal budgeting
• Gate-source withstand 20V provides input margin for drivers
Applications
• Ideal for portable device power-management stages
• Used with DC-DC converters in small SMD designs
• Can be used for LED drivers and small motor control
• Suitable for signal-level switching in consumer electronics
What thermal range can it operate within?
How is it packaged for PCB assembly?
What electrical role does the device serve in switching designs?
How small is the component footprint for layout planning?
Related links
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 IRLML0060TRPBF
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