Infineon HEXFET N-Channel MOSFET, 92 A, 30 V Enhancement, 3-Pin TO-220AB IRLB8748PBF
- RS Stock No.:
- 725-9329
- Mfr. Part No.:
- IRLB8748PBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD198.00
(exc. GST)
TWD207.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 825 unit(s) shipping from October 26, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | TWD39.60 | TWD198.00 |
| 25 - 45 | TWD39.00 | TWD195.00 |
| 50 - 95 | TWD37.80 | TWD189.00 |
| 100 - 245 | TWD37.20 | TWD186.00 |
| 250 + | TWD34.40 | TWD172.00 |
*price indicative
- RS Stock No.:
- 725-9329
- Mfr. Part No.:
- IRLB8748PBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 92A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 370W | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Height | 9.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 92A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 370W | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 175°C | ||
Width 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Height 9.02mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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