STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 400 mA, 600 V Enhancement, 3-Pin TO-92 STQ1HNK60R-AP
- RS Stock No.:
- 714-6796
- Mfr. Part No.:
- STQ1HNK60R-AP
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 10 units)*
TWD179.00
(exc. GST)
TWD188.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 130 unit(s) ready to ship from another location
- Plus 5,640 unit(s) shipping from March 03, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 490 | TWD17.90 | TWD179.00 |
| 500 - 990 | TWD17.60 | TWD176.00 |
| 1000 + | TWD17.50 | TWD175.00 |
*price indicative
- RS Stock No.:
- 714-6796
- Mfr. Part No.:
- STQ1HNK60R-AP
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | MDmesh, SuperMESH | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 4.95mm | |
| Height | 4.95mm | |
| Width | 3.94 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series MDmesh, SuperMESH | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 4.95mm | ||
Height 4.95mm | ||
Width 3.94 mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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