Vishay Si2325DS Type P-Channel MOSFET, -530 mA, -150 V Enhancement, 3-Pin SOT-23 SI2325DS-T1-E3
- RS Stock No.:
- 710-3263
- Mfr. Part No.:
- SI2325DS-T1-E3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD266.00
(exc. GST)
TWD279.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 2,010 unit(s) shipping from October 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 745 | TWD53.20 | TWD266.00 |
| 750 - 1495 | TWD49.20 | TWD246.00 |
| 1500 + | TWD49.00 | TWD245.00 |
*price indicative
- RS Stock No.:
- 710-3263
- Mfr. Part No.:
- SI2325DS-T1-E3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -530mA | |
| Maximum Drain Source Voltage Vds | -150V | |
| Package Type | SOT-23 | |
| Series | Si2325DS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 750mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4mm | |
| Length | 3.04mm | |
| Standards/Approvals | RoHS | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -530mA | ||
Maximum Drain Source Voltage Vds -150V | ||
Package Type SOT-23 | ||
Series Si2325DS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 750mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4mm | ||
Length 3.04mm | ||
Standards/Approvals RoHS | ||
Height 1.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Si2325DS Series MOSFET, 150V Maximum Drain Source Voltage, 750mW Maximum Power Dissipation - SI2325DS-T1-E3
This p-channel MOSFET is a surface-mount semiconductor designed for high-voltage switching in compact electronic assemblies. It operates as an enhancement-mode transistor suitable for low-power applications where controlled source-to-drain conduction and gate-driven switching are required. The device meets RoHS requirements and is specified for a broad temperature range, making it appropriate for varied electronic environments.
Features and Benefits:
• High voltage capability supports switching up to -150V
• Low on-resistance delivers 1.2Ω for efficient conduction
• Continuous drain current rating allows -530mA steady operation
• Limited power loss with 750mW maximum dissipation
• Small gate charge of 7.7nC enables faster gate transitions
• Wide operating temperature range spans -55°C to 150°C
• Low on-resistance delivers 1.2Ω for efficient conduction
• Continuous drain current rating allows -530mA steady operation
• Limited power loss with 750mW maximum dissipation
• Small gate charge of 7.7nC enables faster gate transitions
• Wide operating temperature range spans -55°C to 150°C
Applications
• Suitable for high-voltage load switching in power rails
• Ideal for level-shift circuits requiring P-channel devices
• Used with battery protection and reverse-polarity circuits
• Suitable for compact surface-mount power-management boards
• Can be used for low-power MOSFET roles in signal switching
• Ideal for level-shift circuits requiring P-channel devices
• Used with battery protection and reverse-polarity circuits
• Suitable for compact surface-mount power-management boards
• Can be used for low-power MOSFET roles in signal switching
What package and mounting method does it use?
It is supplied in a SOT-23 package intended for surface mounting to save board space.
What gate voltage limits should be observed during design?
The gate-to-source voltage must not exceed 20V to avoid gate overstress.
How should thermal considerations be handled in PCB layouts?
With a 750mW dissipation limit, provide adequate copper area or thermal vias to spread heat and maintain temperature within the specified -55°C to 150°C range.
Is this component rated for automotive specification levels?
It is not classified as automotive-grade
designers should not assume automotive qualification.
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