STMicroelectronics SuperMESH Type N-Channel SuperMESH Power MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-263

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Subtotal 250 units (supplied on a reel)*

TWD17,900.00

(exc. GST)

TWD18,795.00

(inc. GST)

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  • Shipping from December 21, 2026
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Units
Per unit
250 - 495TWD71.60
500 +TWD70.60

*price indicative

Packaging Options:
RS Stock No.:
687-5190P
Mfr. Part No.:
STB4NK60ZT4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

SuperMESH Power MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

600V

Series

SuperMESH

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

70W

Typical Gate Charge Qg @ Vgs

18.8nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC JESD97

Height

4.6mm

Width

9.35mm

Length

10.4mm

Automotive Standard

No

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics


MOSFET Transistors, STMicroelectronics


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