STMicroelectronics Type N-Channel MOSFET, 1 A, 600 V Enhancement, 3-Pin TO-252 STD1NK60T4
- RS Stock No.:
- 687-5181
- Mfr. Part No.:
- STD1NK60T4
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD246.00
(exc. GST)
TWD258.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 14,380 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 620 | TWD24.60 | TWD246.00 |
| 630 - 1240 | TWD24.10 | TWD241.00 |
| 1250 + | TWD23.60 | TWD236.00 |
*price indicative
- RS Stock No.:
- 687-5181
- Mfr. Part No.:
- STD1NK60T4
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 30W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.4mm | |
| Standards/Approvals | No | |
| Width | 6.2 mm | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 30W | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 2.4mm | ||
Standards/Approvals No | ||
Width 6.2 mm | ||
Length 6.6mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin IPAK
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin IPAK STD1NK60-1
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD12N60DM6