onsemi QFET Type P-Channel MOSFET, 6.6 A, 100 V Enhancement, 3-Pin TO-252 FQD8P10TM
- RS Stock No.:
- 671-1043
- Mfr. Part No.:
- FQD8P10TM
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD136.00
(exc. GST)
TWD142.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 15 unit(s) shipping from June 15, 2026
- Plus 7,200 unit(s) shipping from June 22, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 620 | TWD27.20 | TWD136.00 |
| 625 - 1245 | TWD26.80 | TWD134.00 |
| 1250 + | TWD26.40 | TWD132.00 |
*price indicative
- RS Stock No.:
- 671-1043
- Mfr. Part No.:
- FQD8P10TM
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | QFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 530mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.3mm | |
| Length | 6.6mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series QFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 530mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.3mm | ||
Length 6.6mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Automotive P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi QFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- onsemi QFET Type P-Channel MOSFET 500 V Enhancement, 3-Pin TO-252
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 FQD11P06TM
- onsemi QFET Type P-Channel MOSFET 500 V Enhancement, 3-Pin TO-252 FQD3P50TM
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 FQD17P06TM
- onsemi QFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263