N-Channel MOSFET, 600 mA, 20 V, 3-Pin SOT-523 onsemi FDY300NZ
- RS Stock No.:
- 671-0845
- Mfr. Part No.:
- FDY300NZ
- Manufacturer:
- onsemi
5980 In stock for delivery within 6 working days
Added
Price (VAT excluded) Each (In a Pack of 10)
TWD14.60
(exc. GST)
TWD15.33
(inc. GST)
| Units | Per unit | Per Pack* |
| 10 - 740 | TWD14.60 | TWD146.00 |
| 750 - 1490 | TWD14.30 | TWD143.00 |
| 1500 + | TWD14.00 | TWD140.00 |
| *price indicative | ||
- RS Stock No.:
- 671-0845
- Mfr. Part No.:
- FDY300NZ
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
Product Details
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 600 mA |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-523 (SC-89) |
| Series | PowerTrench |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 240 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 625 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Length | 1.7mm |
| Width | 0.98mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 0.8 nC @ 4.5 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Height | 0.78mm |
| Minimum Operating Temperature | -55 °C |