DiodesZetex ZXMN10A07F Type N-Channel MOSFET, 800 mA, 100 V Enhancement, 3-Pin SOT-23 ZXMN10A07FTA
- RS Stock No.:
- 669-7679
- Mfr. Part No.:
- ZXMN10A07FTA
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD131.00
(exc. GST)
TWD137.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 210 unit(s) shipping from May 25, 2026
- Plus 19,150 unit(s) shipping from June 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | TWD13.10 | TWD131.00 |
| 750 - 1490 | TWD12.80 | TWD128.00 |
| 1500 + | TWD12.70 | TWD127.00 |
*price indicative
- RS Stock No.:
- 669-7679
- Mfr. Part No.:
- ZXMN10A07FTA
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 800mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | ZXMN10A07F | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 806mW | |
| Forward Voltage Vf | 0.95V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 3.05mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 800mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series ZXMN10A07F | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 806mW | ||
Forward Voltage Vf 0.95V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 3.05mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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