Vishay SUD23N06-31 Type N-Channel MOSFET, 23 A, 60 V Enhancement, 3-Pin TO-252 SUD23N06-31-GE3
- RS Stock No.:
- 636-5397
- Mfr. Part No.:
- SUD23N06-31-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD146.00
(exc. GST)
TWD153.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 4,520 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 495 | TWD29.20 | TWD146.00 |
| 500 - 995 | TWD28.60 | TWD143.00 |
| 1000 + | TWD28.20 | TWD141.00 |
*price indicative
- RS Stock No.:
- 636-5397
- Mfr. Part No.:
- SUD23N06-31-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | SUD23N06-31 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 31mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 3W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.38mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series SUD23N06-31 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 31mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 3W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 2.38mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
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