Toshiba 2SK Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SC-59 2SK1062(F)
- RS Stock No.:
- 601-1961
- Mfr. Part No.:
- 2SK1062(F)
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD273.00
(exc. GST)
TWD286.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 60 unit(s) ready to ship from another location
- Plus 2,770 unit(s) shipping from February 05, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | TWD27.30 | TWD273.00 |
| 20 - 40 | TWD26.60 | TWD266.00 |
| 50 - 90 | TWD26.00 | TWD260.00 |
| 100 - 190 | TWD25.20 | TWD252.00 |
| 200 + | TWD24.60 | TWD246.00 |
*price indicative
- RS Stock No.:
- 601-1961
- Mfr. Part No.:
- 2SK1062(F)
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SC-59 | |
| Series | 2SK | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Width | 1.5 mm | |
| Length | 2.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SC-59 | ||
Series 2SK | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Width 1.5 mm | ||
Length 2.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
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