onsemi MMBF170L Type N-Channel MOSFET, 500 mA, 60 V Enhancement, 3-Pin SOT-23 MMBF170LT1G
- RS Stock No.:
- 545-0321
- Mfr. Part No.:
- MMBF170LT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD45.00
(exc. GST)
TWD47.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
Supply shortage
- 160 left, ready to ship from another location
- Plus 21,010 left, shipping from March 12, 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | TWD4.50 | TWD45.00 |
| 750 - 1490 | TWD4.40 | TWD44.00 |
| 1500 + | TWD4.30 | TWD43.00 |
*price indicative
- RS Stock No.:
- 545-0321
- Mfr. Part No.:
- MMBF170LT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 500mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | MMBF170L | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 225mW | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.3 mm | |
| Length | 2.9mm | |
| Height | 0.94mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 500mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series MMBF170L | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 225mW | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.3 mm | ||
Length 2.9mm | ||
Height 0.94mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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