N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB Infineon IRF630NPBF

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Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9.3 A
Maximum Drain Source Voltage	200 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	300 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	82 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	35 nC @ 10 V
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Length	10.54mm
Width	4.69mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	8.77mm