Vishay IRFBC20 Type N-Channel Power MOSFET, 2.2 A, 600 V Enhancement, 3-Pin TO-220AB IRFBC20PBF
- RS Stock No.:
- 542-9490
- Mfr. Part No.:
- IRFBC20PBF
- Manufacturer:
- Vishay
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TWD31.00
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- RS Stock No.:
- 542-9490
- Mfr. Part No.:
- IRFBC20PBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220AB | |
| Series | IRFBC20 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.4Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220AB | ||
Series IRFBC20 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.4Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Height 9.01mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
Vishay IRFBC20 Series Power MOSFET, 600V Maximum Drain Source Voltage, 2.2A Maximum Continuous Drain Current - IRFBC20PBF
This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-control tasks in industrial and electronic systems. It is supplied in a through-hole TO-220AB package and is intended for applications requiring elevated voltage tolerance and robust thermal endurance in conventional board-mounted assemblies.
Features and Benefits:
• 600V drain-to-source rating enables high-voltage switching applications • 2.2A continuous current capacity supports moderate load drivers • 4.4Ω Rds(on) simplifies gate-drive design for low-frequency control • 50W power dissipation allows sustained power handling under cooling • 18nC typical gate charge reduces switching energy at modest speeds • 150°C maximum junction temperature tolerates elevated thermal stress
Applications
• Suitable for high-voltage power supplies and converters • Ideal for industrial motor-drive control stages • Used for load switching in automation equipment • Can be used for gate-controlled power regulation in test rigs • Suitable for replacement in legacy through-hole high-voltage circuits
What gate voltage range is acceptable for operation?
The device permits gate excursions up to 20V relative to source for normal operation.
How does the package support assembly and handling?
The TO-220AB through-hole format provides three-pin mounting and easy heatsink attachment for mechanical stability and thermal management.
What environmental temperature limits apply during use?
It operates across a temperature span down to -55°C and up to a maximum of 150°C junction temperature.
What is the typical switching charge to consider for drive circuitry?
Expect an approximate total gate charge of 18nC at typical drive conditions when sizing driver capability.
Are there recognised material or manufacturing restrictions on the part?
The component conforms to RoHS material restrictions as part of its manufacturing approvals.
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