Vishay IRF830A Type N-Channel Power MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-220AB IRF830APBF
- RS Stock No.:
- 542-9434
- Distrelec Article No.:
- 171-16-197
- Mfr. Part No.:
- IRF830APBF
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD78.00
(exc. GST)
TWD81.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 324 unit(s) shipping from August 17, 2026
- Plus 615 unit(s) shipping from August 24, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 12 | TWD78.00 |
| 13 - 24 | TWD76.00 |
| 25 + | TWD74.00 |
*price indicative
- RS Stock No.:
- 542-9434
- Distrelec Article No.:
- 171-16-197
- Mfr. Part No.:
- IRF830APBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRF830A | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Power Dissipation Pd | 74W | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Standards/Approvals | RoHS | |
| Width | 4.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRF830A | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Power Dissipation Pd 74W | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 9.01mm | ||
Length 10.41mm | ||
Standards/Approvals RoHS | ||
Width 4.7mm | ||
Automotive Standard No | ||
Vishay IRF830A Series Power MOSFET, 500V Drain Source Voltage, 5A Continuous Drain Current - IRF830APBF
This power MOSFET is a high-voltage N-channel enhancement transistor designed for switching and power-conversion tasks in industrial and commercial electronics. It operates across a wide temperature range for demanding environments and is supplied in a through-hole TO-220AB package for straightforward mounting and thermal management.
Features and Benefits:
• 500V drain rating enables high-voltage switching applications
• 1.4Ω maximum Rds reduces conduction losses under load
• 5A continuous drain current supports moderate current designs
• 74W maximum power dissipation allows substantial heat handling
• 24nC typical gate charge yields predictable switching performance
• 30V gate tolerance permits robust gate-drive margins
• 1.4Ω maximum Rds reduces conduction losses under load
• 5A continuous drain current supports moderate current designs
• 74W maximum power dissipation allows substantial heat handling
• 24nC typical gate charge yields predictable switching performance
• 30V gate tolerance permits robust gate-drive margins
Applications
• Suitable for high-voltage supply switching in inverters
• Ideal for industrial motor-drive switching stages
• Used with discrete power supplies in laboratory equipment
• Can be used for resistive and inductive load switching
• Appropriate for through-hole prototyping and repair projects
• Ideal for industrial motor-drive switching stages
• Used with discrete power supplies in laboratory equipment
• Can be used for resistive and inductive load switching
• Appropriate for through-hole prototyping and repair projects
What thermal performance considerations should be made when using it?
Thermal management must account for the 74W dissipation rating
a suitable heatsink and correct mounting in the TO-220AB orientation will maintain junction temperatures within safe limits.
How does the gate drive affect switching behaviour?
With a typical gate charge of 24nC and a maximum Vgs of 30V, gate-drive circuitry should be sized to provide sufficient current for desired rise and fall times while keeping gate voltage below the specified limit.
What environmental limits define its operating range?
The device is rated to function from -55°C up to 150°C, so system design should ensure ambient and thermal-resistance values keep junction temperature inside that span.
Is it suitable for automotive-grade designs?
It is not classified as automotive grade
designers should consider automotive-specific alternatives when vehicle-level qualifications are required.
Related links
- Vishay IRF830A Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220AB IRF830APBF
- Vishay IRF830A Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-263 IRF830ASPBF
- Vishay Single 1 Type N-Channel Power MOSFET 500 V, 3-Pin TO-262 IRF830ALPBF
- Vishay IRF840A Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220AB IRF840APBF
- Vishay IRF820 Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220AB IRF820PBF
- Vishay IRF840 Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220AB IRF840PBF
- Vishay IRFB11N50A Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220AB IRFB11N50APBF
- Vishay D Series Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220AB SIHP8N50D-GE3