N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB Vishay IRFBG30PBF
- RS Stock No.:
- 541-1146
- Mfr. Part No.:
- IRFBG30PBF
- Manufacturer:
- Vishay
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Added
Price (VAT excluded) Each
TWD74.00
(exc. GST)
TWD77.70
(inc. GST)
| Units | Per unit |
| 1 - 12 | TWD74.00 |
| 13 - 24 | TWD72.00 |
| 25 + | TWD70.00 |
- RS Stock No.:
- 541-1146
- Mfr. Part No.:
- IRFBG30PBF
- Manufacturer:
- Vishay
Product overview and Technical data sheets
Legislation and Compliance
Product Details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.1 A |
| Maximum Drain Source Voltage | 1000 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 80 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Length | 10.41mm |
| Width | 4.7mm |
| Transistor Material | Si |
| Height | 9.01mm |
| Minimum Operating Temperature | -55 °C |