IRFBG30PBF N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB Vishay

  • RS Stock No. 541-1146
  • Mfr. Part No. IRFBG30PBF
  • Manufacturer Vishay
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 3.1 A
Maximum Drain Source Voltage 1000 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 5 Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 125 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Maximum Operating Temperature +150 °C
Height 9.01mm
Typical Gate Charge @ Vgs 80 nC @ 10 V
Minimum Operating Temperature -55 °C
Transistor Material Si
Width 4.7mm
Length 10.41mm
281 In stock for delivery within 6 working days
Price (VAT excluded) Each
TWD 67.00
(exc. GST)
TWD 70.00
(inc. GST)
units
Per unit
1 - 24
TWD67.00
25 - 99
TWD60.00
100 - 249
TWD59.00
250 - 499
TWD54.00
500 +
TWD53.00
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