N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

RS Stock No.:: 541-1124P
Mfr. Part No.:: IRFBE30PBF
Manufacturer:: Vishay

N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

Price Each (Supplied as a Tape)**

TWD60.00

(exc. GST)

TWD63.00

(inc. GST)

426 In stock for delivery within 6 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over TWD2,857.00 (ex VAT)

Units	Per unit
13 - 24	TWD54.00
25 +	TWD53.00

**price indicative

RS Stock No.:: 541-1124P
Mfr. Part No.:: IRFBE30PBF
Manufacturer:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	4.1 A
Maximum Drain Source Voltage	800 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	3 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	78 nC @ 10 V
Width	4.7mm
Transistor Material	Si
Length	10.41mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	9.01mm

N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

FREE delivery for orders over TWD2,857.00 (ex VAT)

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor