Vishay IRFP N-Channel MOSFET, 7.8 A, 800 V Enhancement, 3-Pin TO-247 IRFPE50PBF
- RS Stock No.:
- 541-1089
- Mfr. Part No.:
- IRFPE50PBF
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD184.00
(exc. GST)
TWD193.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 9 unit(s) shipping from October 19, 2026
- Plus 256 unit(s) shipping from October 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 6 | TWD184.00 |
| 7 - 12 | TWD180.00 |
| 13 + | TWD179.00 |
*price indicative
- RS Stock No.:
- 541-1089
- Mfr. Part No.:
- IRFPE50PBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.8A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-247 | |
| Series | IRFP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 200nC | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 190W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.87mm | |
| Height | 20.7mm | |
| Width | 5.31mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.8A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-247 | ||
Series IRFP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 200nC | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 190W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 15.87mm | ||
Height 20.7mm | ||
Width 5.31mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
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