P-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRFD9120PBF
- RS Stock No.:
- 541-0553
- Mfr. Part No.:
- IRFD9120PBF
- Manufacturer:
- Vishay
29 In stock for delivery within 3 working days
Added
Price (VAT excluded) Each
TWD49.00
(exc. GST)
TWD51.45
(inc. GST)
| Units | Per unit |
| 1 + | TWD49.00 |
- RS Stock No.:
- 541-0553
- Mfr. Part No.:
- IRFD9120PBF
- Manufacturer:
- Vishay
Product overview and Technical data sheets
Legislation and Compliance
Product Details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centres.
Dynamic dV/dt rating
Repetitive avalanche rated
Repetitive avalanche rated
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 1 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | HVMDIP |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 600 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 1.3 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Length | 5mm |
| Width | 6.29mm |
| Transistor Material | Si |
| Height | 3.37mm |
| Minimum Operating Temperature | -55 °C |