Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V Enhancement, 3-Pin TO-220 IRF3710PBF
- RS Stock No.:
- 540-9812
- Distrelec Article No.:
- 302-84-009
- Mfr. Part No.:
- IRF3710PBF
- Manufacturer:
- Infineon
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TWD69.00
(exc. GST)
TWD72.45
(inc. GST)
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In Stock
- 199 unit(s) ready to ship from another location
- Plus 43 unit(s) shipping from June 18, 2026
- Plus 1,000 unit(s) shipping from September 24, 2026
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Units | Per unit |
|---|---|
| 1 - 12 | TWD69.00 |
| 13 - 24 | TWD66.00 |
| 25 + | TWD63.00 |
*price indicative
- RS Stock No.:
- 540-9812
- Distrelec Article No.:
- 302-84-009
- Mfr. Part No.:
- IRF3710PBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Operating Temperature | 175°C | |
| Height | 8.77mm | |
| Standards/Approvals | No | |
| Length | 10.54mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Operating Temperature 175°C | ||
Height 8.77mm | ||
Standards/Approvals No | ||
Length 10.54mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
Infineon HEXFET Series MOSFET, 57A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF3710PBF
This MOSFET is a durable power semiconductor that is essential in various electronic applications. It is designed for high efficiency, excelling in settings that require low resistance and superior thermal performance, making it important for contemporary electronics in fields such as automation and mechanical systems.
Features & Benefits
• Utilises HEXFET technology for low on-resistance
• Handles a maximum continuous drain current of 57A
• Functions effectively within a drain-source voltage of 100V
• Enables fast switching capabilities to enhance overall performance
• Designed for operation at a maximum junction temperature of +175°C
• Optimised for thermal management with minimal heat generation
Applications
• Utilised in automotive power systems for efficient energy management
• Suitable for power supply circuits to enhance energy efficiency
• Applicable in motor control systems for high current scenarios
• Effective in industrial automation for consistent performance under load
What is the significance of the low on-resistance in this MOSFET?
Low on-resistance reduces power losses and enhances efficiency, which is crucial for high-performance applications.
Can it be used in high-temperature environments?
Yes, it operates effectively up to a maximum junction temperature of +175°C, fitting for challenging applications.
How does the gate threshold voltage affect operation?
The gate threshold voltage of 2V to 4V ensures effective switching, allowing for precise control in various circuit designs.
What type of mounting is suitable for this device?
This MOSFET is intended for through-hole mounting, facilitating secure installation in numerous applications.
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
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- Infineon HEXFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-247