STMicroelectronics STripFET Type N-Channel MOSFET, 9 A, 200 V Enhancement, 3-Pin TO-220 IRF630
- RS Stock No.:
- 486-0171
- Mfr. Part No.:
- IRF630
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD242.00
(exc. GST)
TWD254.10
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 120 unit(s) ready to ship from another location
- Plus 130 unit(s) shipping from April 03, 2026
- Plus 400 unit(s) shipping from July 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | TWD48.40 | TWD242.00 |
| 15 - 20 | TWD47.00 | TWD235.00 |
| 25 + | TWD44.60 | TWD223.00 |
*price indicative
- RS Stock No.:
- 486-0171
- Mfr. Part No.:
- IRF630
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | STripFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 75W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 9.15mm | |
| Width | 4.6 mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series STripFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 75W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 9.15mm | ||
Width 4.6 mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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