STMicroelectronics STripFET II Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-220 STP55NF06
- RS Stock No.:
- 485-7715
- Mfr. Part No.:
- STP55NF06
- Manufacturer:
- STMicroelectronics
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD131.00
(exc. GST)
TWD137.55
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 65 unit(s) ready to ship from another location
- Plus 15 unit(s) shipping from June 18, 2026
- Plus 150 unit(s) shipping from July 08, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | TWD26.20 | TWD131.00 |
| 15 - 20 | TWD25.80 | TWD129.00 |
| 25 + | TWD25.40 | TWD127.00 |
*price indicative
- RS Stock No.:
- 485-7715
- Mfr. Part No.:
- STP55NF06
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | STripFET II | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 44.5nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 110W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 9.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series STripFET II | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 44.5nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 110W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 9.15mm | ||
Automotive Standard No | ||
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Related links
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