Nexperia BSH103 N-Channel MOSFET, 850 mA, 30 V Enhancement, 3-Pin SOT-23 BSH103,215
- RS Stock No.:
- 484-5560
- Mfr. Part No.:
- BSH103,215
- Manufacturer:
- Nexperia
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
TWD407.50
(exc. GST)
TWD428.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 2,400 unit(s) shipping from March 10, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 725 | TWD16.30 | TWD407.50 |
| 750 - 1475 | TWD14.70 | TWD367.50 |
| 1500 + | TWD14.60 | TWD365.00 |
*price indicative
- RS Stock No.:
- 484-5560
- Mfr. Part No.:
- BSH103,215
- Manufacturer:
- Nexperia
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 850mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | BSH103 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500mW | |
| Typical Gate Charge Qg @ Vgs | 2.1nC | |
| Maximum Gate Source Voltage Vgs | -8V, +8V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Height | 1mm | |
| Length | 3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 850mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series BSH103 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500mW | ||
Typical Gate Charge Qg @ Vgs 2.1nC | ||
Maximum Gate Source Voltage Vgs -8V, +8V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Height 1mm | ||
Length 3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
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