Vishay SIS Type N-Channel MOSFET, 178.3 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS66DN-T1-GE3
- RS Stock No.:
- 281-6040
- Mfr. Part No.:
- SISS66DN-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD307.00
(exc. GST)
TWD322.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | TWD30.70 | TWD307.00 |
| 100 - 240 | TWD30.00 | TWD300.00 |
| 250 - 490 | TWD29.50 | TWD295.00 |
| 500 - 990 | TWD28.80 | TWD288.00 |
| 1000 + | TWD28.20 | TWD282.00 |
*price indicative
- RS Stock No.:
- 281-6040
- Mfr. Part No.:
- SISS66DN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 178.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SIS | |
| Package Type | PowerPAK 1212-8S | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00138Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 65.8W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24.7nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 178.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SIS | ||
Package Type PowerPAK 1212-8S | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00138Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 65.8W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24.7nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET with schottky diode has applications in synchronous rectification, synchronous buck converter, and DC/DC conversions.
TrenchFET Generation IV power MOSFET
SKYFET with monolithic schottky diode
Related links
- Vishay SIS Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS66DN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 80 V, 8-Pin PowerPAK 1212-8S SiSS588DN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8PT SiSA12BDN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 60 V Enhancement, 8-Pin 1212-8 SIS4634LDN-T1-GE3
- Vishay TrenchFET N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212-8S SISS516DN-T1-UE3