Vishay SIS Type N-Channel MOSFET, 58.1 A, 80 V, 8-Pin PowerPAK 1212-8S SiSS588DN-T1-GE3
- RS Stock No.:
- 239-5405
- Mfr. Part No.:
- SiSS588DN-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD218.00
(exc. GST)
TWD228.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 6,000 unit(s) shipping from June 15, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD43.60 | TWD218.00 |
| 50 - 95 | TWD42.80 | TWD214.00 |
| 100 - 245 | TWD41.20 | TWD206.00 |
| 250 - 995 | TWD39.80 | TWD199.00 |
| 1000 + | TWD38.60 | TWD193.00 |
*price indicative
- RS Stock No.:
- 239-5405
- Mfr. Part No.:
- SiSS588DN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58.1A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK 1212-8S | |
| Series | SIS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.008Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14.2nC | |
| Maximum Power Dissipation Pd | 56.8W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58.1A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK 1212-8S | ||
Series SIS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.008Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14.2nC | ||
Maximum Power Dissipation Pd 56.8W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard No | ||
The Vishay N channel power MOSFET has drain current of 58.1 A. It is used for synchronous rectification, primary side switch, DC/DC converters, OR-ing and hot swap switch, power supplies, motor drive control, battery management
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
Related links
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