Vishay SIZF4800LDT 2 N-Channel MOSFET, 36 A, 80 V Enhancement, 12-Pin 3 x 3FS SIZF4800LDT-T1-GE3
- RS Stock No.:
- 280-0006
- Mfr. Part No.:
- SIZF4800LDT-T1-GE3
- Manufacturer:
- Vishay
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TWD338.00
(exc. GST)
TWD354.88
(inc. GST)
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In Stock
- Plus 5,636 unit(s) shipping from November 09, 2026
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 4 - 56 | TWD84.50 | TWD338.00 | - |
| 60 - 96 | TWD63.00 | TWD252.00 | 25% |
| 100 - 236 | TWD56.50 | TWD226.00 | 33% |
| 240 - 996 | TWD55.00 | TWD220.00 | 34% |
| 1000 + | TWD54.00 | TWD216.00 | 36% |
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- RS Stock No.:
- 280-0006
- Mfr. Part No.:
- SIZF4800LDT-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | 3 x 3FS | |
| Series | SIZF4800LDT | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 80V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC-Q101, RoHS, 100 percent Rg and UIS tested | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type 3 x 3FS | ||
Series SIZF4800LDT | ||
Mount Type Surface | ||
Pin Count 12 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 80V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC-Q101, RoHS, 100 percent Rg and UIS tested | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay MOSFET is a Dual N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Symmetric dual n-channel
Fully lead (Pb)-free device
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