Vishay SIJ Type P-Channel MOSFET, 44.4 A, 80 V Enhancement, 7-Pin SO-8L SIJ4819DP-T1-GE3
- RS Stock No.:
- 279-9936
- Mfr. Part No.:
- SIJ4819DP-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 4 units)*
TWD441.20
(exc. GST)
TWD463.28
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 5,992 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 56 | TWD110.30 | TWD441.20 |
| 60 - 96 | TWD100.00 | TWD400.00 |
| 100 - 236 | TWD89.00 | TWD356.00 |
| 240 - 996 | TWD87.30 | TWD349.20 |
| 1000 + | TWD85.50 | TWD342.00 |
*price indicative
- RS Stock No.:
- 279-9936
- Mfr. Part No.:
- SIJ4819DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 44.4A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SO-8L | |
| Series | SIJ | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.0207Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 73.5W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.13mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 44.4A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SO-8L | ||
Series SIJ | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.0207Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 73.5W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5.13mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Less voltage drop
Reduces conduction loss
Fully lead (Pb)-free device
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