STMicroelectronics STP N-Channel MOSFET, 7 A, 800 V Enhancement, 3-Pin TO-220 STP80N600K6

The image is for reference only, please refer to product details and specifications

View all MOSFETs
Bulk discount available
View bulk pricing options

Subtotal 10 units (supplied in a tube)*

TWD995.00

(exc. GST)

TWD1,044.80

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 56 unit(s) shipping from September 14, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
10 - 18TWD99.50
20 +TWD97.50

*price indicative

Packaging Options:
RS Stock No.:
275-1356P
Mfr. Part No.:
STP80N600K6
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

800V

Series

STP

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

10.7nC

Maximum Power Dissipation Pd

86W

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Height

4.6mm

Length

28.9mm

Width

10.4mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics high voltage N-channel power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best in class on resistance per area and gate charge for applications requiring superior power density and high efficiency.

Ultra low gate charge

100 percent avalanche tested

Zener protected

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy