Infineon SPP18P06P-H Type P-Channel MOSFET, -18.7 A, 60 V Enhancement, 3-Pin PG-TO252-3 SPP18P06PHXKSA1

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Subtotal (1 tube of 50 units)*

TWD1,510.00

(exc. GST)

TWD1,585.50

(inc. GST)

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50 - 50TWD30.20TWD1,510.00
100 +TWD24.10TWD1,205.00

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RS Stock No.:
273-7552
Mfr. Part No.:
SPP18P06PHXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-18.7A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-TO252-3

Series

SPP18P06P-H

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.13Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81.1W

Forward Voltage Vf

1.33V

Maximum Gate Source Voltage Vgs

8 V

Typical Gate Charge Qg @ Vgs

28nC

Maximum Operating Temperature

175°C

Standards/Approvals

Qualified according to AEC Q101, Halogen Free according to IEC61249-2-21, RoHS

Width

40 mm

Height

1.5mm

Length

40mm

Automotive Standard

AEC-Q101

The Infineon MOSFET is a P channel small signal MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It is a halogen free according to IEC61249 2 21.

RoHS compliant

Avalanche rated

Enhancement mode

Pb free lead finishing

Qualified according to AEC Q101

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