Infineon OptiMOS-TM3 N-Channel MOSFET, 80 A, 100 V N, 3-Pin PG-TO-220
- RS Stock No.:
- 273-7467
- Mfr. Part No.:
- IPP086N10N3GXKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD173.00
(exc. GST)
TWD181.64
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 454 unit(s) shipping from September 21, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD86.50 | TWD173.00 |
| 10 - 18 | TWD78.00 | TWD156.00 |
| 20 - 98 | TWD77.00 | TWD154.00 |
| 100 - 248 | TWD62.50 | TWD125.00 |
| 250 + | TWD56.00 | TWD112.00 |
*price indicative
- RS Stock No.:
- 273-7467
- Mfr. Part No.:
- IPP086N10N3GXKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PG-TO-220 | |
| Series | OptiMOS-TM3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 40mm | |
| Standards/Approvals | IEC61249-2-21, JEDEC1 | |
| Height | 1.5mm | |
| Length | 40mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PG-TO-220 | ||
Series OptiMOS-TM3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 40mm | ||
Standards/Approvals IEC61249-2-21, JEDEC1 | ||
Height 1.5mm | ||
Length 40mm | ||
Automotive Standard No | ||
The Infineon MOSFET is ideal for high frequency switching and synchronous rectification. This MOSFET is qualified according to JEDEC1 for target application. It is a N channel MOSFET and halogen free according to IEC61249 2 21.
Pb free lead plating
RoHS compliant
Excellent gate charge
Very low on resistance
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