Infineon HEXFET Type N-Channel MOSFET, 173 A, 60 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 273-3030
- Mfr. Part No.:
- IRFS7537TRLPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD310.00
(exc. GST)
TWD325.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 785 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | TWD62.00 | TWD310.00 |
| 25 - 45 | TWD51.60 | TWD258.00 |
| 50 - 95 | TWD47.80 | TWD239.00 |
| 100 - 245 | TWD44.40 | TWD222.00 |
| 250 + | TWD43.40 | TWD217.00 |
*price indicative
- RS Stock No.:
- 273-3030
- Mfr. Part No.:
- IRFS7537TRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 173A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 230W | |
| Typical Gate Charge Qg @ Vgs | 142nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 173A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.30mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 230W | ||
Typical Gate Charge Qg @ Vgs 142nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
The Infineon single N-channel HEXFET power MOSFET in a D2-Pak package is optimized for broadest availability from distribution partners.
Product qualification according to JEDEC standard
Softer body diode compared to previous silicon generation
Industry standard surface-mount power package
Related links
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