Infineon IPN Type N-Channel MOSFET, 3.6 A, 650 V Enhancement, 3-Pin PG-SOT223
- RS Stock No.:
- 273-3016
- Mfr. Part No.:
- IPN60R1K5PFD7SATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD157.00
(exc. GST)
TWD164.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 2,990 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | TWD15.70 | TWD157.00 |
| 50 - 90 | TWD13.30 | TWD133.00 |
| 100 - 240 | TWD12.20 | TWD122.00 |
| 250 - 990 | TWD12.00 | TWD120.00 |
| 1000 + | TWD11.90 | TWD119.00 |
*price indicative
- RS Stock No.:
- 273-3016
- Mfr. Part No.:
- IPN60R1K5PFD7SATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPN | |
| Package Type | PG-SOT223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 6W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 4.6nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC Standard | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPN | ||
Package Type PG-SOT223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 6W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 4.6nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC Standard | ||
Automotive Standard No | ||
The Infineon 600V cool MOS PFD7 super junction MOSFET complements the cool MOS 7 offering for consumer applications.
BOM cost reduction and easy manufacturing
Robustness and reliability
Related links
- Infineon IPN Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-SOT223 IPN60R1K5PFD7SATMA1
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