Infineon OptiMOS 5 Type N-Channel MOSFET, 87 A, 60 V Enhancement, 3-Pin PG-TO-220 FullPAK
- RS Stock No.:
- 273-2996
- Mfr. Part No.:
- IPA029N06NM5SXKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
TWD147.00
(exc. GST)
TWD154.36
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 480 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD73.50 | TWD147.00 |
| 10 - 18 | TWD66.50 | TWD133.00 |
| 20 - 24 | TWD65.50 | TWD131.00 |
| 26 - 48 | TWD61.00 | TWD122.00 |
| 50 + | TWD56.00 | TWD112.00 |
*price indicative
- RS Stock No.:
- 273-2996
- Mfr. Part No.:
- IPA029N06NM5SXKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 87A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TO-220 FullPAK | |
| Series | OptiMOS 5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 38W | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 87A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TO-220 FullPAK | ||
Series OptiMOS 5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 38W | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFET in TO-220 fullPAK package features increased power density, improved efficiency with low RDS and lower system costs. The TO-220 FullPAK package portfolio of power MOSFETs presents a perfect solution for synchronous rectification.
Less paralleling required
Low voltage overshoot
Less heat generation
Related links
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