Infineon HEXFET Type N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin SO-8
- RS Stock No.:
- 273-2806
- Mfr. Part No.:
- IRF7351TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD456.00
(exc. GST)
TWD478.80
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from January 25, 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD91.20 | TWD456.00 |
| 50 - 95 | TWD83.00 | TWD415.00 |
| 100 - 495 | TWD76.00 | TWD380.00 |
| 500 - 1995 | TWD65.00 | TWD325.00 |
| 2000 + | TWD63.80 | TWD319.00 |
*price indicative
- RS Stock No.:
- 273-2806
- Mfr. Part No.:
- IRF7351TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
- COO (Country of Origin):
- PH
The Infineon MOSFET is a 60V N Channel HEXFET Power MOSFET. This MOSFET is used for low power motor drive systems and for isolated DC to DC converters.
Ultra low gate impedance
20V VGS maximum gate rating
Fully characterized avalanche voltage and current
Related links
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 IRF7351TRPBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET & Diode 100 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8