Vishay SIDR N-Channel MOSFET, 227 A, 60 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3
- RS Stock No.:
- 268-8285
- Mfr. Part No.:
- SIDR626EP-T1-RE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD312.00
(exc. GST)
TWD327.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 6 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | TWD156.00 | TWD312.00 |
| 50 - 98 | TWD140.50 | TWD281.00 |
| 100 - 248 | TWD115.50 | TWD231.00 |
| 250 + | TWD111.50 | TWD223.00 |
*price indicative
- RS Stock No.:
- 268-8285
- Mfr. Part No.:
- SIDR626EP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 227A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK SO-8DC | |
| Series | SIDR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00174Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 150W | |
| Typical Gate Charge Qg @ Vgs | 102nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 227A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK SO-8DC | ||
Series SIDR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00174Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 150W | ||
Typical Gate Charge Qg @ Vgs 102nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Vishay N channel TrenchFET generation 4 power MOSFET has TOP side cooling feature provides additional venue for thermal transfer. It is used in applications such as synchronous rectification, motor drive switch, battery and load switch.
Tuned for the lowest figure of merit
ROHS compliant
UIS tested 100 percent
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