ROHM R6013VNX Type N-Channel MOSFET, 8 A, 600 V Enhancement, 3-Pin TO-220 R6013VNXC7G
- RS Stock No.:
- 265-5418
- Mfr. Part No.:
- R6013VNXC7G
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD203.00
(exc. GST)
TWD213.16
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 980 unit(s) shipping from September 07, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | TWD101.50 | TWD203.00 |
| 50 - 98 | TWD98.50 | TWD197.00 |
| 100 - 248 | TWD94.50 | TWD189.00 |
| 250 - 498 | TWD92.50 | TWD185.00 |
| 500 + | TWD90.50 | TWD181.00 |
*price indicative
- RS Stock No.:
- 265-5418
- Mfr. Part No.:
- R6013VNXC7G
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | R6013VNX | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.3Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 54W | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series R6013VNX | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.3Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 54W | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM power MOSFET with a low on resistance and high power package which is suitable for switching circuits, single cell battery applications and mobile applications.
Fast reverse recovery time (trr)
Low on resistance
Fast switching speed
Drive circuits can be simple
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