Microchip VP0104 Type P-Channel MOSFET, -500 mA, 40 V MOSFET, 3-Pin TO-92 VP0104N3-G

RS Stock No.:: 264-8949
Mfr. Part No.:: VP0104N3-G
Manufacturer:: Microchip

Microchip VP0104 Type P-Channel MOSFET, -500 mA, 40 V MOSFET, 3-Pin TO-92 VP0104N3-G

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Subtotal (1 pack of 10 units)*

TWD347.00

(exc. GST)

TWD364.40

(inc. GST)

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Units	Per unit	Per Pack*
10 - 40	TWD34.70	TWD347.00
50 - 90	TWD34.00	TWD340.00
100 - 240	TWD27.10	TWD271.00
250 - 490	TWD26.40	TWD264.00
500 +	TWD25.80	TWD258.00

*price indicative

RS Stock No.:: 264-8949
Mfr. Part No.:: VP0104N3-G
Manufacturer:: Microchip

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Microchip
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-500mA
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-92
	Series	VP0104
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	8Ω
	Channel Mode	MOSFET
	Forward Voltage Vf	2V
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Microchip
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -500mA
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-92
	Series VP0104
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 8Ω
	Channel Mode MOSFET
	Forward Voltage Vf 2V
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - VP0104N3-G

The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Microchip VP0104 Type P-Channel MOSFET, -500 mA, 40 V MOSFET, 3-Pin TO-92 VP0104N3-G

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