Infineon HEXFET Type N-Channel MOSFET, 3.2 A, 30 V Enhancement, 6-Pin Micro6 IRLMS1503TRPBF
- RS Stock No.:
- 262-6786
- Distrelec Article No.:
- 304-41-683
- Mfr. Part No.:
- IRLMS1503TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 50 units)*
TWD525.00
(exc. GST)
TWD551.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 3,000 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | TWD10.50 | TWD525.00 |
| 100 - 200 | TWD9.50 | TWD475.00 |
| 250 - 450 | TWD9.30 | TWD465.00 |
| 500 - 950 | TWD8.60 | TWD430.00 |
| 1000 + | TWD8.40 | TWD420.00 |
*price indicative
- RS Stock No.:
- 262-6786
- Distrelec Article No.:
- 304-41-683
- Mfr. Part No.:
- IRLMS1503TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | Micro6 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.7W | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type Micro6 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.7W | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is combined with the fast switching speed and ruggedized device design that power MOSFET well known for, provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Ultra low Rds
N-channel
Related links
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