Infineon HEXFET Type N-Channel MOSFET, 195 A, 40 V Enhancement, 3-Pin TO-262 IRFSL7437PBF
- RS Stock No.:
- 262-6774
- Distrelec Article No.:
- 304-41-679
- Mfr. Part No.:
- IRFSL7437PBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD390.00
(exc. GST)
TWD409.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 1,090 unit(s) shipping from May 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD78.00 | TWD390.00 |
| 50 - 95 | TWD60.80 | TWD304.00 |
| 100 - 245 | TWD54.40 | TWD272.00 |
| 250 - 495 | TWD53.80 | TWD269.00 |
| 500 + | TWD49.80 | TWD249.00 |
*price indicative
- RS Stock No.:
- 262-6774
- Distrelec Article No.:
- 304-41-679
- Mfr. Part No.:
- IRFSL7437PBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-262 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.075Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-262 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.075Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon power MOSFET provides benefits such as improved gate, avalanche and dynamic dV/dt ruggedness and fully characterized capacitance and avalanche SOA.
Halogen free
Enhanced body diode dV/dt and dI/dt capability
Related links
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