Infineon IPP Type N-Channel MOSFET, 185 A, 60 V, 3-Pin TO-220 IPP019N06NF2SAKMA1
- RS Stock No.:
- 260-1210
- Mfr. Part No.:
- IPP019N06NF2SAKMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
TWD110.00
(exc. GST)
TWD115.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 830 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD55.00 | TWD110.00 |
| 10 - 98 | TWD49.50 | TWD99.00 |
| 100 - 248 | TWD45.00 | TWD90.00 |
| 250 - 498 | TWD40.00 | TWD80.00 |
| 500 + | TWD36.50 | TWD73.00 |
*price indicative
- RS Stock No.:
- 260-1210
- Mfr. Part No.:
- IPP019N06NF2SAKMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 185A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | IPP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 188W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.92V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Width | 15.8 mm | |
| Height | 4.75mm | |
| Standards/Approvals | RoHS, IEC 61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 185A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series IPP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 188W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.92V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Width 15.8 mm | ||
Height 4.75mm | ||
Standards/Approvals RoHS, IEC 61249-2-21 | ||
Automotive Standard No | ||
The Infineon MOSFET is qualified according to JEDEC standard and is optimized for wide range of applications.
Pb-free lead plating
RoHS compliant
Halogen-free
Related links
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