Infineon IPP Type N-Channel MOSFET, 113 A, 40 V Enhancement, 3-Pin TO-220 IPP033N04NF2SAKMA1
- RS Stock No.:
- 260-1062
- Mfr. Part No.:
- IPP033N04NF2SAKMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD207.00
(exc. GST)
TWD217.35
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 665 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | TWD41.40 | TWD207.00 |
| 10 - 95 | TWD37.20 | TWD186.00 |
| 100 - 245 | TWD33.60 | TWD168.00 |
| 250 - 495 | TWD30.20 | TWD151.00 |
| 500 + | TWD27.40 | TWD137.00 |
*price indicative
- RS Stock No.:
- 260-1062
- Mfr. Part No.:
- IPP033N04NF2SAKMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 113A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPP | |
| Package Type | TO-220 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 107W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.75mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Width | 10.67 mm | |
| Length | 15.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 113A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPP | ||
Package Type TO-220 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 107W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 175°C | ||
Height 4.75mm | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Width 10.67 mm | ||
Length 15.8mm | ||
Automotive Standard No | ||
The Infineon MOSFET provides an addressing a broad range of applications from low to high switching frequency having a broad availability from distribution partners to excellent price and performance ratio.
Ideal for high and low switching frequency
Capable of wave-soldering
Related links
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