Infineon IPT N-Channel MOSFET, 365 A, 100 V Enhancement, 16-Pin HDSOP IPTC014N10NM5ATMA1
- RS Stock No.:
- 259-2732
- Mfr. Part No.:
- IPTC014N10NM5ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 unit)*
TWD229.00
(exc. GST)
TWD240.45
(inc. GST)
FREE delivery for orders over NT$1,300.00
- 1,800 unit(s) shipping from September 23, 2027
Units | Per unit |
|---|---|
| 1 - 9 | TWD229.00 |
| 10 - 99 | TWD219.00 |
| 100 - 249 | TWD207.00 |
| 250 - 499 | TWD197.00 |
| 500 + | TWD188.00 |
*price indicative
- RS Stock No.:
- 259-2732
- Mfr. Part No.:
- IPTC014N10NM5ATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 365A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPT | |
| Package Type | HDSOP | |
| Mount Type | Surface Mount | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 880mV | |
| Typical Gate Charge Qg @ Vgs | 168nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC 61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 365A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPT | ||
Package Type HDSOP | ||
Mount Type Surface Mount | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 880mV | ||
Typical Gate Charge Qg @ Vgs 168nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC 61249-2-21 | ||
Automotive Standard No | ||
Infineon IPT Series MOSFET, 100V Maximum Drain-Source Voltage, 365A Maximum Continuous Drain Current - IPTC014N10NM5ATMA1
Features and Benefits:
• High continuous drain current enables sustained heavy-current operation
• 375W power dissipation capacity supports high-power switching tasks
• 168nC gate charge balances drive energy and switching dynamics
• Wide operating temperature range allows operation in extreme environments
Applications
• Ideal for power-supply output stages and converters
• Used with battery management for high-discharge circuits
• Can be used for industrial inverter switching assemblies
What gate voltage tolerance should be observed during operation?
How does the device handle thermal stress during continuous operation?
What resistance performance can be expected for conduction losses?
What temperature extremes can it withstand during storage or use?
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