Infineon SN7002N N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT SN7002NH6433XTMA1
- RS Stock No.:
- 258-4029
- Mfr. Part No.:
- SN7002NH6433XTMA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD53.00
(exc. GST)
TWD55.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 6,640 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | TWD5.30 | TWD53.00 |
| 20 - 90 | TWD5.10 | TWD51.00 |
| 100 - 240 | TWD4.80 | TWD48.00 |
| 250 - 490 | TWD4.40 | TWD44.00 |
| 500 + | TWD4.00 | TWD40.00 |
*price indicative
- RS Stock No.:
- 258-4029
- Mfr. Part No.:
- SN7002NH6433XTMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SN7002N | |
| Package Type | SOT | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.36W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 1.15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21, AEC Q101 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SN7002N | ||
Package Type SOT | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.36W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 1.15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21, AEC Q101 | ||
Automotive Standard No | ||
The Infineon SIPMOS small-signal-transistor is qualified according to AEC Q101 and halogen-free according to IEC61249-2-21.
N-Channel
Enhancement mode
dv/dt rated
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