Infineon HEXFET N-Channel MOSFET, 61 A, 55 V TO-252 IRLR3915TRPBF

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Subtotal (1 pack of 2 units)*

TWD122.00

(exc. GST)

TWD128.10

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8TWD61.00TWD122.00
10 - 98TWD58.50TWD117.00
100 - 248TWD54.00TWD108.00
250 - 498TWD51.50TWD103.00
500 +TWD47.50TWD95.00

*price indicative

Packaging Options:
RS Stock No.:
258-3999
Distrelec Article No.:
304-40-553
Mfr. Part No.:
IRLR3915TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

61A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

17mΩ

Maximum Gate Source Voltage Vgs

16V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

120W

Typical Gate Charge Qg @ Vgs

61nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

Fast Switching

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