Infineon HEXFET N-Channel MOSFET, 180 A, 30 V WDSON IRF6727MTRPBF
- RS Stock No.:
- 258-3968
- Mfr. Part No.:
- IRF6727MTRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD186.00
(exc. GST)
TWD195.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from March 01, 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | TWD93.00 | TWD186.00 |
| 10 - 98 | TWD88.00 | TWD176.00 |
| 100 - 248 | TWD83.00 | TWD166.00 |
| 250 - 498 | TWD78.00 | TWD156.00 |
| 500 + | TWD71.00 | TWD142.00 |
*price indicative
- RS Stock No.:
- 258-3968
- Mfr. Part No.:
- IRF6727MTRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | WDSON | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Maximum Power Dissipation Pd | 89W | |
| Forward Voltage Vf | 770mV | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type WDSON | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Maximum Power Dissipation Pd 89W | ||
Forward Voltage Vf 770mV | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
High-current rating
Dual-side cooling capability
Low package height of 0.7mm
Compact form factor
High efficiency
Environmentally friendly
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