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Infineon HEXFET N-Channel MOSFET, 182 A, 200 V, 3-Pin TO-247AC IRF200P222

Name: Infineon HEXFET N-Channel MOSFET, 182 A, 200 V, 3-Pin TO-247AC IRF200P222
Brand: Infineon
SKU: 258-3959
Availability: InStock

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TWD266.00

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TWD279.30

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Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	182A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-247AC
	Mount Type	Surface, Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	6.6mΩ
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	135nC
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	556W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 182A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-247AC
	Mount Type Surface, Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 6.6mΩ
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 135nC
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 556W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

The Infineon MOSFET StrongIRFET is improved gate, avalanche and dynamic dv/dt ruggedness, it is fully characterized capacitance and avalanche SOA.

Enhanced body diode dv/dt and di/dt capability

Lead-free, RoHS compliant

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