Infineon IPP N-Channel MOSFET, 50 A, 650 V TO-220 IPP65R041CFD7XKSA1
- RS Stock No.:
- 258-3897
- Mfr. Part No.:
- IPP65R041CFD7XKSA1
- Manufacturer:
- Infineon
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- RS Stock No.:
- 258-3897
- Mfr. Part No.:
- IPP65R041CFD7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | IPP | |
| Mount Type | Surface Mount | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Typical Gate Charge Qg @ Vgs | 102nC | |
| Maximum Power Dissipation Pd | 227W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series IPP | ||
Mount Type Surface Mount | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Typical Gate Charge Qg @ Vgs 102nC | ||
Maximum Power Dissipation Pd 227W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 650V CoolMOS CFD7 super junction MOSFET in a TO-220 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
Ultrafast body diode and very low Qrr
650V breakdown voltage
Significantly reduced switching losses compared to competition
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
Related links
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