Infineon IPD Type N-Channel MOSFET, 59 A, 100 V N, 3-Pin TO-252 IPD122N10N3GATMA1

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Subtotal (1 pack of 2 units)*

TWD82.00

(exc. GST)

TWD86.10

(inc. GST)

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Per unit
Per Pack*
2 - 8TWD41.00TWD82.00
10 - 98TWD39.50TWD79.00
100 - 248TWD36.50TWD73.00
250 - 498TWD34.00TWD68.00
500 +TWD30.50TWD61.00

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Packaging Options:
RS Stock No.:
258-3833
Mfr. Part No.:
IPD122N10N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

IPD

Pin Count

3

Maximum Drain Source Resistance Rds

12.2mΩ

Channel Mode

N

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

94W

Typical Gate Charge Qg @ Vgs

26nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, IEC 61249-2-21

Automotive Standard

No

The Infineon OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM.

Excellent switching performance

Less paralleling required

Smallest board-space consumption

Easy-to-design products

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